Samsung has announced development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology. The has also confirmed that it has completed the product evaluation for compatibility with AMD.
This uses new high-κ material that increases cell capacitance, and proprietary design technology that improves critical circuit characteristics.
It uses advanced, multi-layer extreme ultraviolet (EUV) lithography and features the industry’s highest die density, which enables a 20% gain in wafer productivity.
It promises 7.2 gigabits per second (Gbps). This translates into processing two 30 gigabyte (GB) UHD movies in just one second.
It consumes 23% less power than the previous DRAM, and the company says that this will be an ideal solution for global IT companies pursuing more environment-friendly operations.
Samsung said that it will bein the mass production of the 12nm-class DDR5 DRAM in 2023. This will be used in a wide range of market segments in areas such as next-generation computing, data centers and AI-driven systems.